Ferroelectric Memory
Last verified 2026-05-02. JSON
The funding figures on this page are attributed, not sourced: a publisher is on record but no document URL is. How we mark provenance.
| Total raised | $115.0Mattributed |
|---|---|
| Latest round | grant, $2.7M, 2024-04-01attributed |
| Founded | 2016 |
| Headquarters | Dresden, Germany |
| Industry | semiconductors |
| Stage | unknown |
| Website | ferroelectric-memory.com |
Ferroelectric Memory Company develops DRAM+ and CACHE+ memory based on ferroelectric hafnium oxide, pairing DRAM-class speed with non-volatile data retention. It targets AI data centers, edge and IoT systems, and automotive applications that need fast, persistent, low-power memory. Its hafnium-oxide cells offer persistence without the standby power of DRAM, spun out of TU Dresden as a fabless designer.
Funding rounds
| Date | Round | Amount | Lead |
|---|---|---|---|
| 2024-04-01 | grant | $2.7M | undisclosed |
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Provenance
| Fact | Status | Basis |
|---|---|---|
| Grant, $2.7M | attributed | eu-grant named as publisher. No document URL on file. |
| Total raised $115.0M | attributed | eu-grant named as publisher. No document URL on file. |
| Company existence | self-reported | ferroelectric-memory.com, read 2026-05-02 |
| Description | self-reported | ferroelectric-memory.com, read 2026-05-02 |
Nothing on this page is sourced yet. A sourced fact links to a document that states it.
Change history
No change recorded since records began on 2026-09-24.