Tech Blog

Ferroelectric Memory

Last verified 2026-05-02. JSON

The funding figures on this page are attributed, not sourced: a publisher is on record but no document URL is. How we mark provenance.

Total raised$115.0Mattributed
Latest roundgrant, $2.7M, 2024-04-01attributed
Founded2016
HeadquartersDresden, Germany
Industrysemiconductors
Stageunknown
Websiteferroelectric-memory.com

Ferroelectric Memory Company develops DRAM+ and CACHE+ memory based on ferroelectric hafnium oxide, pairing DRAM-class speed with non-volatile data retention. It targets AI data centers, edge and IoT systems, and automotive applications that need fast, persistent, low-power memory. Its hafnium-oxide cells offer persistence without the standby power of DRAM, spun out of TU Dresden as a fabless designer.

Funding rounds

DateRoundAmountLead
2024-04-01grant$2.7Mundisclosed

Detected tech stack

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Provenance

FactStatusBasis
Grant, $2.7Mattributedeu-grant named as publisher. No document URL on file.
Total raised $115.0Mattributedeu-grant named as publisher. No document URL on file.
Company existenceself-reportedferroelectric-memory.com, read 2026-05-02
Descriptionself-reportedferroelectric-memory.com, read 2026-05-02

Nothing on this page is sourced yet. A sourced fact links to a document that states it.

Change history

No change recorded since records began on 2026-09-24.